Gas Phase Decomposition of an Organometallic Chemical Vapor Decomposition Precursor to A1N: (Al(CH3)2NH2)3
RENSSELAER POLYTECHNIC INST TROY NY DEPT OF CHEMISTRY
Pagination or Media Count:
A novel technique for probing chemical vapor deposition reaction mechanisms is presented. A conventional hot-wall Pyrex reactor is coupled to a molecular beam apparatus. Preliminary results of the decomposition of an organmetallic precursor Aluminum Nitride, AlCH32NH23, indicate a decomposition temperature between 200 and 270 C. The mass spectrum of the precursor at 100 C provides evidence for the existence of a trimer-dimer equilibrium of the precursor at this temperature. Keywords Methylamides Reprints.
- Industrial Chemistry and Chemical Processing
- Organic Chemistry
- Physical Chemistry