Fundamental and Applied Aspects of Defect Engineering in GaAs; EL2 and Other Nonstoichiometric Defects
Final rept. 15 Feb-14 Oct 1989
MASSACHUSETTS INST OF TECH CAMBRIDGE
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The work constituted an initial part of a 3 year program on Defect Engineering in Gallium Arsenide. This part realized at the Massachusetts Institute of Technology was terminated on October 14, 1989. The work was focused on the role of the EL2 defect and native shallow acceptors in the engineering of GaAs resistivity and thermal conversion characteristics. We have completed a detailed theoretical analysis of the engineering of GaAs resistivity. The results show that all essential GaAs parameters, i.e., the resistivity value, the semiconducting-semi-insulating transition point, and the margin for heavy metal contaminants, could be controlled by controlling the arsenic atom fraction in the melt andor the rate of crystal cooling between 1000 C and 700 C. Keywords Crystal defects, Crystal growth.
- Solid State Physics