Accession Number:

ADA218422

Title:

Investigation of Schottky Barriers

Descriptive Note:

Final technical rept. 17 Jul-31 Dec 1989,

Corporate Author:

SRI INTERNATIONAL MENLO PARK CA

Personal Author(s):

Report Date:

1989-12-01

Pagination or Media Count:

44.0

Abstract:

This final report summarizes the technical progress made under the auspices of AFOSR Contract F49620-86-K-0018. Substantial progress was made in two key areas electronic structure studies of the Schottky barrier and transport studies. With respect to the electronic structure component, we applied ab initio electronic structure techniques to ideal metal-semiconductor interfaces. In a study of a sequence of metal-semiconductor contacts, we are able to address the problem of Schottky barrier pinning. Another study addresses the early stages of formation of Schottky barriers. With respect to the transport component, we developed some new techniques for treating high-field transport, in particular transport through a Schottky barrier. We also examine scattering from ionized dopants in the interstitial regions. jes

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE