Accession Number:

ADA218392

Title:

Development of High Performance Beta-SiC Field-Effect Transistors

Descriptive Note:

Quarterly technical rept. no. 2, 21 Oct 1989-20 Jan 1990,

Corporate Author:

DIAMOND MATERIALS INC STATE COLLEGE PA

Personal Author(s):

Report Date:

1990-02-14

Pagination or Media Count:

8.0

Abstract:

During the last three months of this Phase II program, Diamond Materials, Inc. DMI, has 1 finished major equipment installations, 2 identified a potentially superior source gas for beta-SiC CVD, and 3 instituted an equipment inventory and maintenance system in compliance with Federal Acquisition Regulations FARs. All proposed engineering upgrades to DMIs beta-SiC CVD reactor have been installed and tested. DMI has installed its activated reactive evaporation ARE reactor which will be used for the deposition of cubic AIN and MgO dielectric films on beta-SiC. DMI has also installed a hot wall tube furnace which will be used for thermal oxidation of beta-SiC crystals to form SiO2. DMI has identified a proprietary source gas for the heteroepitaxial growth of beta-SiC on TiC substrates. This source gas promises to be greatly superior to the gas DMI is currently using, viz., methyltrichlorosilane MTS. Use of MTS will probably hinder controlled in situ doping of beta-SiC epi layers. DMI has identified a highly capable, specialty chemical company willing to synthesize and purify this source gas. DMI has written a proposal to a certain, large company requesting funding to develop this source gas. If this source gas is developed by private funding, then it will be acquired for use on this Government contract. DMI has also instituted an inventory and maintenance procedure for equipment purchased with Government funds, in compliance with FARs. rrh

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE