High Efficiency Octave Bandwidth Millimeter Wave Power Amplifier
Final rept. 1 Apr 1987-31 Mar 1989
HONEYWELL SYSTEMS AND RESEARCH CENTER BLOOMINGTON MN
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MM-Wave monolithic distributed amplifiers are designed to cover the 30-60 GHz frequency band. Both low-pass bandpass and negative resistance compensated designs are developed. The MMIC designs are based on pseudomorphic MODFET devices having 14 micron gates fabricated on 3-inch wafers using a hybrid e-beamoptical stepper lithography technique. In addition, to standard pseudomorphic MODFET structures with uniformly doped A1GaAs, psuedo-pulsed-doped structures were also developed to address low drain breakdown voltage problems. 60GHz monolithic gain cells with 10 mW output power were also developed. Keywords GaAs MMIC MM-wave Monolithic Octave bandwidth Distributed amplifier Cascode Negative resistance comp. E-Beamstepper lithography.
- Electrical and Electronic Equipment