Joint NOSC/NRL (Naval Ocean Systems Center/Naval Research Laboratory) InP Microwave/Millimeter Wave Technology Workshop Held in San Diego, California on 25-26 January 1989
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
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Technical Highlights Drift problem with MIS devices under attack with epitaxial dielectrics, heat pulse processing, silicon substrates, silicon wedge dielectrics, gentle plasma etching, sulfidation 5 drift over 100,000 sec, 4V drain, 4V gate, hydrogenation 2 drift, Ion implantation damages to 3 microns or more even for the shortest anneal cycle, Limits to HJ device performance related to epitaxial layer design at present HBT working at 30 beta max, Atomic planar doping in use for MODFET on InP with matching-V sat about 1.6 to 1.8 X 10 to the 7th power cmsec, Small drain current drift observed in SiO2 based HIGFET-drift less than 4 over 15 hours, InAlAs-InGaAs planar-doped HEMTs lattice matched to InP, 0-.25 micron T-gate, 900 mSmm, 0.5 dB NF at 18 GHz, and Hot electron InPInGaAs HBT ft140 GHz, fmax70GHz. Keywords include Metal insulator field effect transistors.
- Radiofrequency Wave Propagation