Accession Number:

ADA217181

Title:

An Electron-Beam Controlled Semiconductor Switch

Descriptive Note:

Final rept. 15 Jun 1986-30 Sep 1989

Corporate Author:

OLD DOMINION UNIV NORFOLK VA

Report Date:

1989-11-01

Pagination or Media Count:

155.0

Abstract:

The objective of this work was to study the feasibility of using electron-beam controlled semiconductors as closing and opening switches. An Electron-beam with electron energies in the range from 20keV to 150keV was used to generate an electron-hole plasma in the cathode region of a GaAs switch. The band-edge radiation provided by the radiatively recombining electron-hole pairs this region serves as the source function for electron-hole generation in the bulk of the switch. This self-pumping effect allows to overcome the space charge limitation of the current flow through the switch and therefore makes it suitable for high power applications. Switch current gains of more than 2000 have been obtained experimentally in semi-insulating GaAs. It was also demonstrated experimentally that doping of the cathodeluminescence region of switch with high concentrations of a shallow acceptor improves the radiative efficiency of the cathodoluminescence. Modeling results show that improvements by one order of magnitude over the previously reached current gain can be obtained by proper doping of the cathode region of the GaAs switch. The dark current in these devices can be kept in the range of 10 micro-Asq cm by using a p-i-n structure.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE