Accession Number:

ADA214794

Title:

Growth Characteristics and Electronic Behavior of Ultrathin Epitaxial Metallizations

Descriptive Note:

Final rept. 1 Jul 1986-31 Aug 1989

Corporate Author:

MICHIGAN UNIV ANN ARBOR HARRISON M RANDALL LAB OF PHYSICS

Personal Author(s):

Report Date:

1989-10-31

Pagination or Media Count:

5.0

Abstract:

A summary of research findings is presented on a project to study the use of Molecular Beam Epitaxy Techniques in metallization of semiconductors such as Gallium Arsenide. Epitaxial metal layers of Niobium and Tantalum have been grown on sapphire and overlayers of Germanium, Gold, Copper and Cobalt have been deposited on 110 and 100 GaAs. The interfacial structure and defects have been studied using x-ray scattering and transmission electron microscopy. aw

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE