Accession Number:

ADA214784

Title:

Interfacial and Thin Film Chemistry in Electron Device Fabrication

Descriptive Note:

Annual letter rept. 1 Oct 1988-30 Sep 1989

Corporate Author:

COLUMBIA UNIV NEW YORK MICROELECTRONICS SCIENCE LAB

Report Date:

1989-11-13

Pagination or Media Count:

66.0

Abstract:

A. Molecular Beam Epitaxy MBE growth and Devices We have developed and optimized the MBE growth parameters for the polytype InAsAlSbGaSb material system. Various device structures based on this material system have been explored and have yielded excellent results. New materials techniques to achieve high performance GaAs charge-coupled devices have been investigated. Use has been made of deep-UV light to enhance the oxidation rate of GaAs and we have found that the Schottky barrier height can be varied over a wide range. B. Laser Surface Interactions New physical mechanisms for light-induced reactions on semiconductor surfaces have been investigated. A new program on laser etching of SiC has begun. Laser assisted etching of copper was investigated using in situ raman spectroscopy. A new noncontacting method of measuring the properties of space-charge depletion layers at semiconductor surfaces has been developed. C. Fundamentals of Processing GasSurface Interactions Experiments have been performed to study the basic chemical dynamics of chlorine atomhydrocarbon chemical reactions. Photochemical reactions of molecules adsorbed on surfaces have been investigated. Interfacial chemistry of dry zeolites, porous molecular sieve materials, and aqueous slurries of alumina have been studied. Keywords Superconductors Photoresists, Heterostructure, Tunneling device, Field effect transistors, Resistive-gate, Photoconductivity, Transition state, Diamond. aw

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE