The Use of RADFETS in Radiation Dose Measurement: Report on Three Lots Prepared for the U.S. Army
Final rept. 18 Jun 1987-18 Sep 1989
RADIATION EXPERIMENTS AND MONITORS OXFORD (UNITED KINGDOM)
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The final report describes the preparation of experimental RADFET dosimeters prepared by REM, a UK firm. Samples were delivered to the US Army for testing. The object was the evaluation of the Radiation - Sensitive Field Effect Transistor RADFET for use in tactical dosimetry systems. Three lots of the new Type TOT500 quadruple - transistor RADFET design were prepared and preliminary evaluations of each lot were made in the UK. A dose range of 5 to 5000 rads 0. 05 to 50 Gy is predicted. Special ceramic packages with a reduced amount of gold in the cavity were used. The zero bias mode, which eliminates batteries from tactical dosimeters, was proved to be useful. The prospects of the RADFET as a practical dosimeter look encouraging. Keywords Silicon Metal-oxide-semiconductor MOS Field effect transistor FET Silicon dioxide Space charge Gamma rays.
- Nuclear Instrumentation