VHSIC/VHSIC-Like Reliability Prediction Modeling
Final technical rept. Sep 1986-Dec 1988
IIT RESEARCH INST ROME NY
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This report describes a study in which the objective was to develop a reliability prediction model for CMOS VHSIC and VHSIC-Like Devices. Since little field failure rate data is available on these devices, a physics of failure approach was taken in which each failure mechanism was modeled separately. The failure modesmechanisms modeled were time-dependent dielectric breakdown, electromigration, contamination, hot carrier effects, package related mechanisms, electrical overstress, and a miscellaneous category. Each of the failure mechanisms modeled were derived from life results, screening test results, test structure data, and theoretical considerations. Keywords Complementary metal oxide semiconductors Very large scale integrated circuits Microcircuit Failure mechanisms Reliability prediction Failure rate.
- Electrical and Electronic Equipment
- Electricity and Magnetism