Minimization of Intermodulation in GaAs MESFET Small-Signal Amplifiers
AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB
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This report examines the dependence of third-order intermodulation distortion on the source reflection coefficient Gamma sub s as a function of frequency, in an amplifier designed according to available-gain criteria. By means of a numerical formulation of the Volterra series, a complete equivalent circuit of the FET can be used, and intermodulation calculations include all feedback effects. The sensitivity of IP3 to Gamma sub s decreases with increasing frequency and can be related to the MESFETs stability. Keywords Intermodulation distortion Nonlinear distortion Volterra series Field effect transistor amplifier.
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