Accession Number:

ADA214543

Title:

Minimization of Intermodulation in GaAs MESFET Small-Signal Amplifiers

Descriptive Note:

Technical rept.

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA ELECTRONICS RESEARCH LAB

Personal Author(s):

Report Date:

1989-09-30

Pagination or Media Count:

31.0

Abstract:

This report examines the dependence of third-order intermodulation distortion on the source reflection coefficient Gamma sub s as a function of frequency, in an amplifier designed according to available-gain criteria. By means of a numerical formulation of the Volterra series, a complete equivalent circuit of the FET can be used, and intermodulation calculations include all feedback effects. The sensitivity of IP3 to Gamma sub s decreases with increasing frequency and can be related to the MESFETs stability. Keywords Intermodulation distortion Nonlinear distortion Volterra series Field effect transistor amplifier.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE