Accession Number:

ADA214192

Title:

Innovative Optoelectronic Materials and Structures Using OMVPE

Descriptive Note:

Final technical rept. 1 Jan-31 Dec 1989

Corporate Author:

CORNELL UNIV ITHACA NY

Personal Author(s):

Report Date:

1989-10-27

Pagination or Media Count:

12.0

Abstract:

An advanced OMVPE process is being developed for the deposition of III-V semiconductor materials and structures. There are important optoelectronic device structures which can not be realized by conventional means. These include AlGaAs semiconductor lasers with improved coherence using embedded diffraction gratings, and GaInP pseudomorphic structures on GaP substrates for short wavelength semiconductor lasers. The structure on GaP result in improved laser performance compared to the 650 nm AlGaInP devices previously developed in this program. The new OMVPE apparatus combines the multichamber reaction cell with deep UV photo-assisted growth and modulation flow epitaxial techniques. Using a combination of such processes, the growth temperature requirements for III-V alloys can be substantially reduced. Selective growth on a sub-micron scale will be attempted with in-situ interference holography. Semiconductors, Optoelectronics, Crystal growth. jes

Subject Categories:

  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE