Accession Number:

ADA210811

Title:

Proceedings of a Symposium on the Physics and Technology of Amorphous SiO2 Held in Les Arcs, France on 29 June-3 July 1987

Descriptive Note:

Corporate Author:

CENTRE NATIONAL D'ETUDES DES TELECOMMUNICATIONS GRENOBLE (FRANCE)

Personal Author(s):

• Devine, Roderick A.

Report Date:

1987-07-03

Pagination or Media Count:

552.0

Abstract:

The contents of this volume represent most of the papers presented either orally or as posters at the international conference. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our understanding of the physics of amorphous Silicon dioxide from the point of view of its structure, defects both intrinsic and extrinsic, its ability to transport current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized SiO2 and progressing towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiO2 and in particular, buried oxide layers formed by ion implantation.

Descriptors:

• *SILICON DIOXIDE
• *AMORPHOUS MATERIALS
• *SYMPOSIA
• *CHARGE TRANSFER
• *ELECTROCHEMISTRY
• *THIN FILMS
• OXIDES
• INTERNAL
• FRANCE
• TRANSPORT
• INTERNATIONAL
• IRRADIATION
• SPECIALISTS
• SCHEDULING
• PHYSICS
• ION IMPLANTATION
• SENSITIVITY
• TRAPPING(CHARGED PARTICLES)
• STARTING
• LAYERS

Subject Categories:

• Industrial Chemistry and Chemical Processing
• Physical Chemistry
• Ceramics, Refractories and Glass
• Crystallography
• Optics
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE