Accession Number:

ADA210770

Title:

Picosecond Carrier Dynamics Near the Gallium Arsenide Surface

Descriptive Note:

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS

Personal Author(s):

• Marvin, Dean C.
• Beck, Steven M.
• Wessel, John E.
• Rollins, Gregory J.

Report Date:

1989-03-28

Pagination or Media Count:

30.0

Abstract:

Numerical modeling procedures were applied to experimental data from picosecond transient-reflectivity experiments in order to characterize carrier dynamics near the GaAs surface. A wide range of surface was studied. The results provide an excellent description of carrier dynamics for 100 surfaces of intrinsic, n-doped, and Cr-doped material. An analytical model, including ambipolar diffusion, bulk recombination, and surface recombination, describes results for the washed material. Surface charge present in unwashed material necessitated use of a more complex numerical model that treats electrons and holes separately. This provide a good description of reflectivity kinetics for the above sample types. The relationship of the new work to prior related work is reviewed. Keywords Gallium arsenide Carrier dynamics Picosecond reflectivity Surface recombination.

Descriptors:

• *SURFACE CHEMISTRY
• *GALLIUM ARSENIDES
• DYNAMICS
• REFLECTIVITY
• NITROGEN
• ELECTRONS
• STATIC ELECTRICITY
• MATHEMATICAL MODELS
• CHROMIUM
• KINETICS
• NUMERICAL METHODS AND PROCEDURES
• RANGE(EXTREMES)
• EXPERIMENTAL DATA
• DOPING

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE