Picosecond Carrier Dynamics Near the Gallium Arsenide Surface
AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS
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Numerical modeling procedures were applied to experimental data from picosecond transient-reflectivity experiments in order to characterize carrier dynamics near the GaAs surface. A wide range of surface was studied. The results provide an excellent description of carrier dynamics for 100 surfaces of intrinsic, n-doped, and Cr-doped material. An analytical model, including ambipolar diffusion, bulk recombination, and surface recombination, describes results for the washed material. Surface charge present in unwashed material necessitated use of a more complex numerical model that treats electrons and holes separately. This provide a good description of reflectivity kinetics for the above sample types. The relationship of the new work to prior related work is reviewed. Keywords Gallium arsenide Carrier dynamics Picosecond reflectivity Surface recombination.
- Solid State Physics