Accession Number:

ADA210740

Title:

Deep Traps and Sidegating in GaAs Devices

Descriptive Note:

Final rept. 15 May 1986-14 May 1989

Corporate Author:

ARIZONA STATE UNIV TEMPE DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

1989-07-15

Pagination or Media Count:

12.0

Abstract:

This is the final technical report for ARO contract DAALO3-86-K-0070. In the report we describe our progress in the areas of semi-insulating GaAs conduction mechanisms and how they apply to the phenomena of sidegating and backgating in GaAs based devices. The experimental and theoretical program evolved into a highly collaborative effort between industry and university with several joint publications resulting. The sidegatingbackgating problem has finally been acknowledged as can be seen by the recent creation of a highly interactive workshop dedicated to such effects. Research included the establishment of electrical and optical characterization facilities specifically designed for the study of the high resistivity materials and their effects on devices. We have made advances in several exponential signals for Deep level Transient Spectroscopy DLTS, imaging of deep level domains using voltage contrast in a scanning electron microscope SEM, surface stability of various passivation techniques and one dimensional, steady state and transient numerical simulations of semi-insulating GaAs transport properties. Additionally we discovered the chaotic properties of the low frequency oscillations.

Subject Categories:

  • Electricity and Magnetism
  • Atomic and Molecular Physics and Spectroscopy
  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE