Advanced GaAs Process Modeling. Volume 1
Final rept. Dec 1985-Oct 1988
STANFORD UNIV CA STANFORD ELECTRONICS LABS
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The objective of the program was to develop physical models for substrate and process defects and variations which affect the electrical parameters of MESFET structures fabricated on this material by direct ion implantation processes. Verification of these models was to be carried out where possible by fabrication of specially designed device structures capable of providing statistically significantly data. In order to remove, as much as possible, unwanted process variations all device processing was carried out under a subcontract with the Rockwell MRDC GaAs pilot line facility. The primary successes of the program include 1 development of a physical model to explain the effect of dislocations on the fluctuations in threshold voltage observed experimentally, 2 development of analytical Pearson IV models for the profiles of the technologically significant ions Si, Se, and Be in 100 oriented GaAs for specific tilt and rotational angles of the substrates with respect to the implant beam, 3 development of one dimensional device and process simulator which allows exploration of the effect of certain process variables on the significant MESFET electrical parameters.
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- Solid State Physics