Accession Number:

ADA210564

Title:

Characterization of Diamond Kilms by Thermogravimetric Analysis and Infrared Spectroscopy

Descriptive Note:

Corporate Author:

NAVAL WEAPONS CENTER CHINA LAKE CA

Report Date:

1989-01-01

Pagination or Media Count:

9.0

Abstract:

Recent advances in the growth of diamond films by low pressure chemical vapor deposition CVD have generated a great deal of interest in developing diamond materials for a variety of technological applications. Unique optical, thermal and mechanical properties make diamond the material of choice for many purposes. A technique involving microwave plasma assisted chemical vapor deposition for the growth of diamond films was described recently by Chang, et. al. Here, we report results obtained in characterizing free-standing diamond films produced by this technique. Diamond films were grown on silicon wafers at about 3 micrometershr by microwave plasma assisted chemical vapor deposition. The infrared transmission of a 3 micrometer thick film varied from near 61 at 5000cm to near 75 at 1000cm. Thermogravimetric analysis indicated that the diamond films oxidize in air at about 650C and are less resistant to oxidation than graphite. A film containing nitrogen was grown by adding N2 to the feed gas.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE