Final technical rept. 15 Jun 1987-31 Dec 1988
PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING
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The objectives of this work were to develop the epitaxial growth of ZnSe on epitaxially grown GaAs, fully characterize this interface electrically, and fabricate a depletion mode field effect transistor which incorporates this interface in the device structure. The electrical quality of our ZnSeGaAs interfaces was investigated with capacitance versus voltage CV and current versus voltage IV measurements. The CV characteristics of annealed AuZnSep-GaAs capacitors were nearly ideal, exhibiting interface state densities which compare favorably with the densities reported at typical AlGaAs interfaces. The occurrence of both hole accumulation for p-type GaAs and inversion for n-type GaAs at the ZnSep-GaAs interface indicates the presence of a substantial valance band offset. The lack of accumulation or inversion layers for electrons suggests a relatively small conduction band discontinuity. The fabrication and IV characteristics of the first depletion-mode field-effect transistors based on a pseudomorphic ZnSen-GaAs heterointerface are described. The IV characteristics of the transistors are close to ideal channel modulation indicates that the Fermi level is not pinned at the ZnSeGaAs interface.
- Electrical and Electronic Equipment
- Solid State Physics