Accession Number:

ADA210439

Title:

Submillimeter Quantum Electronics

Descriptive Note:

Final rept. 1 Apr 1985-1 Nov 1988

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• Sollner, T. C.

Report Date:

1989-06-14

Pagination or Media Count:

80.0

Abstract:

The phenomena of resonant tunneling has been explored in GaAsAlGaAs heterostructures that were grown by molecular-beam epitaxy. The physics and fundamental speed limitations were studied, and devices such as oscillators, multipliers, and mixers have been demonstrated. Useful output has been obtained at room temperature for frequencies up to 425 GHz. The feasibility of resonant- tunneling transistors has been examined, suggesting cutoff frequencies above 100 GHz. Planar antenna arrays have been developed and tested up to 1.7 THz. In the area of compact solid-state instrumentation, a 555 GHz receiver was developed that had a noise temperature of 45000 K and weighed 3 kg.

Descriptors:

• *EPITAXIAL GROWTH
• *MOLECULAR BEAMS
• *QUANTUM ELECTRONICS
• *RESONANCE
• *SOLID STATE ELECTRONICS
• *TUNNELING
• ANTENNA ARRAYS
• INSTRUMENTATION
• LIMITATIONS
• NOISE
• OSCILLATORS
• PHYSICS
• PLANAR STRUCTURES
• ROOM TEMPERATURE
• STRUCTURES
• SUBMILLIMETER WAVES
• TEMPERATURE
• VELOCITY

Subject Categories:

• Electrical and Electronic Equipment
• Quantum Theory and Relativity
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE