Accession Number:

ADA210385

Title:

Advanced GaAs Process Modeling. Volume 1

Descriptive Note:

Final rept. Dec 1985-Oct 1988

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

Report Date:

1989-05-01

Pagination or Media Count:

96.0

Abstract:

The objective of the program was to develop physical models for substrate and process defects and variations which affect the electrical parameters of MESFET structures fabricated on this material by direction implantation processes. Verification of these models was to be carried out where possible by fabrication of specially designed device structures capable of providing statistically significant data. In order to remove, as much as possible, unwanted process variations all device processing was carried our under a subcontract with the Rockwell MRDC GaAs pilot line facility. The primary successes of the program include 1 development of a physical model to explain the effect of dislocations on the fluctuations threshold voltage observed experimentally, 2 development of analytical Pearson IV models for the profiles of the technologically significant ions Si, Se, and Be in 100 oriented GaAs for specific tilt and rotational angles of the substrates with respect to the implant beam, 3 development of a one dimensional device and process simulator which allows exploration of the effect of certain process variables on the significant MESFET electrical parameters.

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE