Accession Number:

ADA210380

Title:

The Growth of Gallium Nitride Films via the Innovative Technique of Atomic Layer Epitaxy

Descriptive Note:

Annual progress rept. 1 Jun 1988-31 May 1989

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1989-06-01

Pagination or Media Count:

28.0

Abstract:

This contract involves investigating the efficacy of atomic layer and molecular beam epitaxy techniques for the growth of GaN a wide bandgap semiconductor. During this reporting period, work was extended to growth of materials in the Al-Ga-In-N solid solution series as well as pure AlN and InN, and heterostructures of these materials. In addition, work was begun on the growth of cubic boron nitride. The first reported heterostructures of cubic GaN AlN were produced. Work also continued on characterization of the cubic GaN already produced. Much improved material and higher growth rates were observed with the installation of a NCSU-designed, constructed, and commissioned electron cyclotron resonance plasma source. Epitaxial growth, Crystallography.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE