Accession Number:

ADA210304

Title:

Properties of Devices Prepared with Epitaxial Layers on InP

Descriptive Note:

Final rept. Jul 1985-Jun 1987

Corporate Author:

DUKE UNIV DURHAM NC

Personal Author(s):

• Casey, Jr, H. C.

Report Date:

1989-03-01

Pagination or Media Count:

36.0

Abstract:

Electrical measurements were made on capacitors prepared with RPECVD SiO2 films on p-type Ga0.47In0.53As at low substrate temperatures. These measurements demonstrated that the RPECVD dielectric is suitable for use in the fabrication of MISFETs. Measurements on RPECVD SiO2 layers on Si showed that care must be taken in cleaning and processing to prevent na ions from being introduced into the dielectric layers. To provide stable characteristics, surface cleaning before deposition must be investigated and processing techniques must be used to prevent the introduction of mobile ions into the deposited dielectric layers. Techniques to reduce the temperature sensitivity of the threshold current density of InP-GaxIn1-yDH lasers were investigated. The most promising technique is the use of thin pseudomorphic active layers and wide energy gap cladding layers.

Descriptors:

• *DIELECTRICS
• *CLEANING
• *SURFACE FINISHING
• *DEPOSITION
• *LAYERS
• *SUBSTRATES
• *EPITAXIAL GROWTH
• *PROCESSING
• MOBILE
• ELECTRICAL MEASUREMENT
• SENSITIVITY
• CURRENT DENSITY
• THRESHOLD EFFECTS
• STABILITY
• LOW TEMPERATURE
• TEMPERATURE
• CAPACITORS
• IONS
• METHODOLOGY

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE