Accession Number:

ADA210269

Title:

Experimental Investigations of Transport and Optical Properties of 3-5 Quantum Well Structures Grown Via Molecular Beam Epitaxy under Optimal Growth Conditions

Descriptive Note:

Progress rept. 1 Jan 1987-31 Dec 1988

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

1989-04-18

Pagination or Media Count:

57.0

Abstract:

Zero field mobilities in GaAsA1xGa1-xAs100 inverted HEMT structures in excess of 100,000 sq cmV-Sec at LN2 temperatures have been achieved . The possibility of high mobilities in square single quantum wells with modulation doping on the inverted interface side only is demonstrated. Photoluminescences linewidth dependence on the square single quantum well width shows inverse proportion rather than the inverse cubic proportion behavior expected from the popularly used notion of well width fluctuations. The observed behavior is shown to be consistent with fluctuations in the band edge discontinuity i.e. well depth arising from in-plane fluctuations in the alloy composition of the A1xGa1-xAs barrier layers in high quality structures. Influence of an electric field across single and coupled-double quantum wells on their optical characteristics is examined theoretically and through photoluminescence, photocurrent, electroreflectance, photoreflectance and Photovoltage measurements. Exploiting growth conditions controlled thermodynamic and kinetic effects on facet formation and inter-facet migration, a unique in-situ method for realization of quantum wire and quantum box structures without the need for lithography or direct-write patterning on such small dimensions is demonstrated. Finally, some initial results on resonant tunneling diodes are reported.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE