Accession Number:

ADA210077

Title:

Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide

Descriptive Note:

Technical rept. 1988-1989

Corporate Author:

CALIFORNIA UNIV LOS ANGELES

Personal Author(s):

• Sadwick, Larry P.
• Wang, Kang L.
• Shuh, David K.
• Kim, Young K.
• Williams, R. S.

Report Date:

1989-07-01

Pagination or Media Count:

9.0

Abstract:

The first epitaxial platinum gallium two PtGa2 films have been grown on gallium arsenide GaAs100 by co-evaporation of the elements under ultra-high vacuum conditions. An electron-beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs100. This study supports the contention that PtGa2 can be a suitable, temperature-stable contact material on GaAs substrates. Epitaxial films Ultra-high vacuum Chemical stability Compound semiconductors Contact degradation Schottky barrier Fermi level pinning.

Descriptors:

• *ELECTRON BEAMS
• KNUDSEN GAGES
• CRYSTAL STRUCTURE
• DEGRADATION
• CHEMICALS
• MATERIALS
• GALLIUM ARSENIDES
• X RAY DIFFRACTION
• FILMS
• EPITAXIAL GROWTH
• SUBSTRATES
• SEMICONDUCTORS
• FERMI SURFACES
• X RAY PHOTOELECTRON SPECTROSCOPY
• GALLIUM
• PLATINUM
• SUPPORTS
• SCHOTTKY BARRIER DEVICES
• AUGER ELECTRON SPECTROSCOPY
• ULTRAHIGH VACUUM
• EVAPORATORS
• TEMPERATURE
• STABILITY

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE