Accession Number:

ADA209969

Title:

Solid State Research

Descriptive Note:

Quarterly technical rept. 1 Aug-31 Oct 1988

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1988-11-15

Pagination or Media Count:

81.0

Abstract:

Contents Microwave Bandpass Modulators in Lithium Niobate Surface-Energy and Temperature Effect on Etched Structures in Compound Semiconductors-Model of the Mass Transport Phenomenon Kinetics of Mass Transport of Etched Structures in InP Due to Surface-Energy Minimization A Simple Model of Amplified Spontaneous Emission Spectral Narrowing High-Power, Diffraction-Limited, Narrowband External Cavity Diode Laser Si-on-Insulator Films Prepared by Zone-Melting Recrystallization with Enhanced Radiative Heating Selective Plasma Etching of Si from GaAs-on-Si Wafers Selective-Area Laser Photodeposition of Transparent Conductive SnO2 Films Electrical Characteristics of Ultrashallow-Junction Diodes Fabricated by Laser Doping Patterned Excimer-Laser Etching of GaAs Within a Molecular Beam Epitaxy Machine PBT Amplification at 94 GHz A 64 X 64-Pixel Back-Illuminated CCD Imager with Low Noise and High Frame Rates High-Speed Resonant-Tunneling Diodes Made from the Pseudomorphic In0.53Ga0.47 AsA1As System Superconductive Nb Thin-Film Capacitors with Ta2O5 Dielectric Deposition of YBa2Cu3Ox Films by Sequential RF Diode Sputtering and Microwave Surface Resistance of BiSrCaCuO Films.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE