Accession Number:

ADA209924

Title:

Zinc Telluride Growth on InP

Descriptive Note:

Annual rept.

Corporate Author:

UNIVERSITY OF MANCHESTER INST OF SCIENCE AND TECHNOLOGY (UNITED KINGDOM) DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1989-01-14

Pagination or Media Count:

55.0

Abstract:

Initial studies have concentrated on the preparation of epitaxial Zinc Selenide on Indium Phosphide 100 substrates and an optimum bakeout procedure for the substrates determined. Subsequently, the doping of ZnSe with small amounts of Tellurium up to ca 5 at was achieved and the structural, compositional and optical properties of the epitaxial layers investigated. It was demonstrated by photoluminescence measurement that in small concentrations approx. 2 at Te acts as an isolated isoelectronic trap in ZnSe and at higher concentrations clusters of Te atoms form. This results in broadened photoluminescence emission peaks. It proved impossible with our atmospheric pressure MOCVD reactor and using a conventional source of Te to prepared epitaxial layers of the ternary ZnSe1-yTey with Te concentration in excess of ca 5 at . Keywords Thin films, Crystal lattices, Layers, P Type semiconductors, N Type semiconductors.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE