A Study of Thermodynamic Phase Stability of Intermetallic Thin Films of Pt2Ga, PtGa and PtGa2 on Gallium Arsenide
Technical rept. 1988-1989
CALIFORNIA UNIV LOS ANGELES
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Epitaxial thin films of three different Platinum Gallium intermetallic compounds have been grown Gallium Arsenide by molecular beam epitaxy MBE. The resultant films have been annealed at various temperatures and then examined using x-ray two-theta diffraction. Both PtGa2 and PtGa thin films are chemically stable on GaAs under 1 atmosphere of N2 up to 450 C and 600, respectively. Thin films of Pt2GA react with GaAs at temperatures as low as 200 C to form phases with higher Gallium concentration. Epitaxial growth of thin films, Interface chemistry, Composition analysis, Thermodynamic control.
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