Scanning Tunneling Microscopy Etching of Micrometer Level Features on P-Type GaAs
Final rept. 15 Aug 1988-14 Feb 1989
J AND D SCIENTIFIC INC MESA AZ
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The goal of the phase I research was to demonstrate that p-type GaAs could be imaged and etched using a scanning tunneling microscope STM tip to produce features smaller than the micrometer level. The material used in this study was Zn doped. The etching solution was 5mM NaOH, 1mM EDTA. Negative biases, i.e. tip positive, of 4 volts yielded etched regions after subsequent oxidation decomposition of the processed region. These regions could be produced much smaller than 1 micrometer. Therefore, the phase I research showed that STM can be used to selectively etch regions of p-type GaAs under electrochemical conditions. This procedure has potential application in the custom production of small, fast semi-conductor devices.
- Electrical and Electronic Equipment