Accession Number:

ADA209079

Title:

Selective Area Epitaxy of Gallium Arsenide on Silicon. Phase 1

Descriptive Note:

Final rept. 15 Jul 1988-14 Jan 1989

Corporate Author:

SPIRE CORP BEDFORD MA

Personal Author(s):

Report Date:

1989-02-01

Pagination or Media Count:

37.0

Abstract:

The research program was to investigate selective-area epitaxy of Gallium Arsenide-on-Silicon by Metal Organic Chemical Vapor Deposition MOCVD as a means of reducing the thermal expansion mismatch effects, hence, improving the deposited film quality, wafer bow, and eliminating film cracking. This has been achieved by MOCVD of GaAs through openings patterned in the silicon dioxide coated wafers. The object of this research program was to develop the technology that will yield device quality GaAs-on-Si and a process applicable for monolithic integration of the high speed andor optical communication capabilities of GaAs with the sophistication of the Si VLSI technology. The feasibility of this approach has been clearly demonstrated in the Phase I research effort, in which successful selective deposition of GaAs films on patterned Si wafers was achieved and the deposited films were characterized by a number of techniques. Preliminary results clearly indicate the effectiveness of this approach to eliminate wafer bow, minimize film cracking, and improve the quality of the heteroepitaxial films. A new deposition technique for GaAs-on-Si by Atomic Layer Epitaxy ALE has been introduced which has the potential of producing superior quality GaAs-on-Si films. Keyword Semiconductors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE