Measurements and Modelling of Thin Silicon Dioxide Films on Silicon
Interim technical rept.
NORTH CAROLINA UNIV AT CHAPEL HILL DEPT OF CHEMISTRY
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The ellipsometric measurement of refractive indices for films less than 50 nm thick is of dubious quality due to the significance of the size of random errors relative to the accuracy required to extract reliable index values from the measurements. In this study the various errors are quantitatively assessed as a function of the film thickness, and then compared with experimental data obtained from differently prepared silicon dioxide films on silicon. The new results confirm previous work that shows higher refractive indices for thinner films. Transmission electron microscopy results confirm the results and graded and discreet layer models are compared.
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