Accession Number:

ADA207674

Title:

Reactive Ion Etching of Polymer Films.

Descriptive Note:

Technical rept.,

Corporate Author:

CORNELL UNIV ITHACA SCHOOL OF CHEMICAL ENGINEERING

Report Date:

1989-05-12

Pagination or Media Count:

25.0

Abstract:

The need for nanometer sized features in integrated circuits calls for the use of dry etching techniques using glow discharge plasmas. The reactive ion etching, RIE, mode in which there is a large difference in potential between the gas phase and the solid surface yields particularly desirable, straight walled etched structures. The design of processes and materials for RIE requires a knowledge of the effects of operating variables on various parameters. In the present work, the parameter emphasized is the etch rate. A novel aspect of the apparatus used incorporates a laser interferometer for in situ measurements of etch rate. Keywords Reactive ion etching Plasma Resist microlithography. MJM

Subject Categories:

  • Inorganic Chemistry
  • Organic Chemistry
  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE