Accession Number:

ADA207569

Title:

Final Report: High Power Semiconductor Laser Sources,

Descriptive Note:

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

Report Date:

1989-01-01

Pagination or Media Count:

93.0

Abstract:

The main purpose of the research was to design a nd fabricate a surface emitting semiconductor laser based on multi quantum well amplification. During the contract period we have succeeded in improvement of the basic quantum well active medium so as to result in maximum gain for a given inversion density and have analyzed the fabrication of GaAsGaAlAs multilayer dielectric reflectors for providing the optical feedback to the surface emitting semiconductor laser. We have also made significant progress in the development of diffusion techniques to provide the p and n regions adjacent to the active region for carrier injection. With continued effort and support we should stand a fair chance of realizing an operating surface emitting semiconductor laser. Keywords Heterojunctions Semiconductor lasers Gallium arsenide, Aluminum gallium arsenide, Quantum wells.

Subject Categories:

  • Solid State Physics
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE