Theory of Aggregate Defects in Silicon
Final technical rept. 1 Jun 1985-28 Feb 1989
LEHIGH UNIV BETHLEHEM PA DEPT OF PHYSICS
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The research summarized in this final technical report was supported under ONR contract N00014-85-K-0460 during the period 1 June 1985 to 28 February 1989. Included are i a brief two page summary of contract-period research accomplishments, and ii an appendix listing publications and presented papers. Reprints of published papers are appended to selected copies of this report otherwise, they are available upon request. During the contract period, our efforts were focussed on point defects in silicon which exhibit large structural departures relaxations from the high-symmetry geometry, and defects which combine to form defect aggregates. The primary goals were to understand on an atomic scale the electronic characteristics of selected defects and defect reactions and, in so doing, reveal physical phenomena basic to defect systems.
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