Accession Number:

ADA207220

Title:

MeV Implantation Studies in LPE-Grown GaAs and InP

Descriptive Note:

Final rept. 1 Oct 1987-31 Mar 1989

Corporate Author:

STATE UNIV OF NEW YORK AT BUFFALO DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1989-03-31

Pagination or Media Count:

80.0

Abstract:

Research has been conducted on growth and evaluation of high quality Gallium Arsenide layer using Liquid Phase Epitaxy LPE and on MeV ion implantation processings of Molecular Beam Epitaxy MBE grown GaInaS layers on GaAs and LPE-grown GaAs layers on GaAs. By a novel growth method i.e., isoelectronic doping of LPE GaAs layers with Indium, high structural and electrical quality layers were successfully grown. In the as-grown Indium-doped LPE GaAs layers, the etch pit density, rocking curve FWHM, and the ideality factor os a schottky diode have improved significantly, showing an optimal In doping density of 2.4 x 10 to the 19th. The effects of MeV ion bombardment in a strained but partially relaxed GaInAs epitaxial layers on GaAs were systematically investigated. Depending on the state of initial relaxation, film thickness, and incident ion beam current, the lattice strain changed differently with the increasing ion beam dose.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE