Structural and Electrical Contact Properties of LPE (Liquid Phase Epitaxially) Grown GaAs Doped with Indium
STATE UNIV OF NEW YORK AT BUFFALO AMHERST
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We have studied the effects of Indium doping on the structural and electrical properties of a liquid phase epitaxially LPE grown Gallium Arsenides. The results of surface morphology studies show that macroscopically, a terrace free area in certain regions can be seen on the surface of a GaAs layer doped with In of 2.4 x 10 to the 19th cc. The full widths at half-maximum FWHM of xray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 x 10 to the 19th cc, beyond which a sharp increase in the FWHM is observed. Etch pit density EPD study also shows that the dislocation density is reduced by doping the epi-layer with In. Isoelectronic doping, liquid phase epitaxy, dislocation.
- Inorganic Chemistry
- Physical Chemistry