Accession Number:

ADA207163

Title:

Structural and Electrical Contact Properties of LPE (Liquid Phase Epitaxially) Grown GaAs Doped with Indium

Descriptive Note:

Journal article

Corporate Author:

STATE UNIV OF NEW YORK AT BUFFALO AMHERST

Personal Author(s):

Report Date:

1988-01-01

Pagination or Media Count:

7.0

Abstract:

We have studied the effects of Indium doping on the structural and electrical properties of a liquid phase epitaxially LPE grown Gallium Arsenides. The results of surface morphology studies show that macroscopically, a terrace free area in certain regions can be seen on the surface of a GaAs layer doped with In of 2.4 x 10 to the 19th cc. The full widths at half-maximum FWHM of xray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 x 10 to the 19th cc, beyond which a sharp increase in the FWHM is observed. Etch pit density EPD study also shows that the dislocation density is reduced by doping the epi-layer with In. Isoelectronic doping, liquid phase epitaxy, dislocation.

Subject Categories:

  • Inorganic Chemistry
  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE