Accession Number:

ADA202866

Title:

Research on Silicon, Carbon, and Silicon Carbide Heterostructures

Descriptive Note:

Annual rept. no. 1, 1 Aug 1987-1 Aug 1988

Corporate Author:

WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA

Report Date:

1988-09-26

Pagination or Media Count:

56.0

Abstract:

The progress made during th first year of a three-year program to study heterostructures of Group IV materials is reported here. The equipment for the three experimental components of the program was assembled and characterized. These facilities include a remote plasma deposition reactor with extensive process diagnostics, an UHV apparatus for quantitative studies of the kinetics of adsorptiondesorption of reactive species on atomically clean silicon surfaces, and an UHV, cryogenic cathodoluminescence spectroscopic facility. A model for the production, losses, and transport of metastable species in the remote reactor was completed. Experiments have begun to determine the reactive species present in the deposition process, the reaction of ethylene at silicon surfaces, and the catholuminescence of carbon in the diamond phase. Plasmas, Deposition, Thin films, Silicon carbide, Diamond, Surfaces, Desorption, Characterization Heterostructures.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE