Accession Number:

ADA202369

Title:

2-6 Semiconductor Superlattices

Descriptive Note:

Annual technical rept. 30 Jun 1987-1 Jul 1988

Corporate Author:

PURDUE UNIV LAFAYETTE IN SCHOOL OF ELECTRICAL ENGINEERING

Report Date:

1988-10-18

Pagination or Media Count:

44.0

Abstract:

The research program is directed toward achieving controlled substitutional doping of the wid bandgap semiconductor ZnSe, ZnSe alloys, and ZnSe-based heterostructures. To achieve this goal the incorporation processes involved in the molecular beam epitaxial and atomic beam epitaxial growth techniques are under study by comparing the experiments with the results of Monte Carlo simulations. As a first approach the n-type doping of zinc selenide with gallium has been investigated and analysed by both optical photoluminescence and electrical Hall effect characterization.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE