Accession Number:

ADA200887

Title:

The Use of Tris(trimethylsilyl)arsine to Prepare Gallium Arsenide and Indium Arsenide

Descriptive Note:

Technical rept.

Corporate Author:

DUKE UNIV DURHAM NC DEPT OF CHEMISTRY

Report Date:

1988-10-03

Pagination or Media Count:

13.0

Abstract:

The reactions of Me3Si3As with some group 13 trihalides have been explored. The reaction between Me3Si3As and GaCl3 results in the facile elimination of approximately two moles of Me3SiCl at room temperature. Further elimination of Me3SiCl occurs less readily and requires heating of the intermediate solid at temperatures up to 185C in order to afford 93-94 of the total Me3SiCl expected. Increasing the temperature does not result in the elimination of additional Me3SiCl, rather a trace of unidentified yellow liquid is formed and gallium arsenide of 95-96 purity is isolated. The reaction between Me3Si3As and GaBr3 proceeds in a similar manner, but more by-products are observed and GaAs of 88 purity is obtained. The analogous reaction between Me3Si3As and InCl3 in refluxing benzene gives 87 of the theoretical amount of Me3SiCl. Further heating of the resulting solid affords InAs of 98 purity. This is the first report of the use of dehalosilylation reactions to form GaAs and InAs. Keywords Gallium Arsenide Indium Arsenide Preparation.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE