Accession Number:

ADA200504

Title:

Electronic GaAs-on-Silicon Material for Advanced High-Speed Optoelectronic Devices. Phase 1

Descriptive Note:

Corporate Author:

ASTROSYSTEMS INC NEWARK DE ASTRO POWER DIV

Personal Author(s):

Report Date:

1987-01-01

Pagination or Media Count:

22.0

Abstract:

AstroPower has successfully demonstrated the growth of device quality GaAs on silicon, using its novel selective liquid phase epitaxial growth technology, during this Phase I research program. Selective growth and graded interlayers were used to reduce lattice strain and minimize lateral dislocation propagation, resulting in a stoichiometric GaAs composition. Device quality layers of lightly n-doped GaAs were grown and junctions were fabricated. Layer quality and uniformity were demonstrated by fabrication of working LEDs. The feasibility study and preliminary equipment design for three inch diameter GaAs on silicon selective liquid phase epitaxy, SLPE, was prepared.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE