Accession Number:

ADA200158

Title:

Fractal and Spherulitic Morphology of Silicon Nitride Crystallized from Amorphous Films

Descriptive Note:

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

1988-01-01

Pagination or Media Count:

16.0

Abstract:

Thin films of substoiciometric silicon nitride were grown by the use of ion beam assisted deposition. The amorphous films were annealed at high temperatures 1017-1200C to produce crystalline alpha-Si3N4. Both highly symmetric spherulitic crystal morphologies and irregular fractal aggregates were seen. In the latter case, a fractal dimension of 1.2 was measured. These two macroscopically different forms possessed correspondingly different microstructures. The morphologies were found to be determined by the temperature of the anneal.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE