Scanning Tunneling Microscopy of Semiconductor Surfaces
Annual summary rept. 1 Apr 1987-30 Sep 1988
STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS
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This research program is aimed at studying the atomic structure of semiconductor surfaces using scanning tunneling microscopy STM. Extensive work has been carried out on the behavior of both indium and gallium on the 111 and the 100 surfaces of silicon. The STM images provide new structural information on all of the metal-induced surface reconstructions observed in these systems. The STM has been particularly applicable to the study of multi-phase surfaces, localized defects, local metal segregation, all of which arise during the growth of a metal on a semiconductor, and can play an important role in the properties of the surface. Information on such spatially localized features Sub-100 A is inaccessible by other means. Some preliminary studies of the InP 110 surface have been done. It is anticipated that the the primary thrust of the research will shift to compound semiconductor surfaces during the coming year. Keywords Atomic structure Semiconductor surfaces Silicon Indium Gallium Scanning tunneling microscopy.
- Atomic and Molecular Physics and Spectroscopy