Accession Number:

ADA199819

Title:

Deposition of InP on Si Substrates for Monolithic Integration of Advanced Electronics

Descriptive Note:

Final rept. 28 Sep 1987-27 Mar 1988

Corporate Author:

SPIRE CORP BEDFORD MA

Personal Author(s):

Report Date:

1988-05-01

Pagination or Media Count:

18.0

Abstract:

The goal of the Phase I effort was to establish a basic growth process for depositing single-crystal InP films on Si substrates our experience in growing high-quality GaAs-on-Si and GaP-on-Si Structures was to provide a background to guide the experiments. Depositions were carried out by atmospheric-pressure MOCVD in a SPI-MO CVD 450 reactor the sources chemicals used were trimethylindium TMin and phosphine PH3 and the main carrier gas was H2. Starting from these basic guidelines, a similar process for InP-on-Si was attempted, with the major variables occurring in Step 2, the nucleation procedure, which is really the most critical step since the surface-oxide- removal procedure Step 1 had been previously optimized for other heteroepitaxy-on-Si projects. Several different types of nucleation layers procedures were attempted. These included different materials InP, In, or P, different thickness, and different temperatures a brief summary of these runs is listed in Table 2-1. Electronics.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE