Accession Number:

ADA199817

Title:

Low Temperature Activation of Ion Implanted Compound Semiconductors

Descriptive Note:

Final rept. 1 Oct 1987-31 Mar 1988

Corporate Author:

MICROWAVE MONOLITHICS INC SIMI VALLEY CA

Personal Author(s):

Report Date:

1988-06-06

Pagination or Media Count:

34.0

Abstract:

During the reported SBIR phase I program, Microwave Monolithics Incorporated MMInc. investigated the feasibility of a new low temperature activation method for ion implanted GaAs processing. This approach taken by MMInc. is based upon the successful solid phase epitaxy developed for silicon integrated circuit processing. The work performed during phase I revealed a crystalline defect restriction to re-crystallation of the amorphous region. The major deterrent to the application of this approach in GaAs appears to occur during the complex amorphization step. Although this topic has high risk it has extremely high potential for improved processing technology needed for high frequency mm-wave devices.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE