Accession Number:

ADA199321

Title:

Growth, Characterization and Device Development in Monocrystalline Diamond Films

Descriptive Note:

Annual rept. 1 Jun 1987-31 May 1988

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH SCHOOL OF ENGINEERING

Report Date:

1988-06-01

Pagination or Media Count:

109.0

Abstract:

Cu single crystals have been grown and prepared for use as a lattice matched substrate. A literature survey of potential substrates which are both lattice and energy matched with diamond to promote two-dimensional growth has also been completed and promising materials are currently being utilized for diamond growth. Two chemical vapor deposition systems have been designed. The first, a hot filament system, has been constructed, characterized and used to deposit diamond on a variety of substrates. A microwave chemical vapor deposition system and an in-situ analysis system are currently under construction. Films have been analyzed by numerous techniques, the most significant being Raman spectroscopy and the first reported high resolution lattice imaging of CVD diamond. Diamond power MESFET devices have been theoretically evaluated and found to be capable of generating rf power output levels greater than other existing or proposed semiconductors, including Gallium Arsenide. Efficiency for the diamond MESFETs greater than 40 was determined and a more linear response and greater dynamic range than GaAs was found. Keywords Crystal growth Single crystals Semiconducting films Metalized semiconductor field effect transistors.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE