Accession Number:

ADA199055

Title:

The Growth of Gallium Nitride Films Via the Innovative Technique of Atomic Layer Epitaxy

Descriptive Note:

Annual progress rept. 1 Jun 1987-31 May 1988

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

1988-06-01

Pagination or Media Count:

32.0

Abstract:

Gallium nitride GaN is a wide bandgap 3.45 eV at 300K III-V compound semiconductor. The large direct bandgap and high electron drift velocity of GaN are important properties in the performance of short wavelength optical devices and high power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN andor AlxGa1-xN devices include threat warning systems based on the ultraviolet UV emission from the exhaust plumes of missiles and radar systems which require high power microwave generation. Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue light emitting diodes LEDs and high temperature electronic devices. This report discusses this material.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE