Hot Carriers in Semiconductors: Proceedings of the International Conference (5th) Held in Boston, Massachusetts on 20-24 July 1987
AT AND T BELL LABS HOLMDEL NJ
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Several major areas of current research activities in the field of Hot Carriers maybe identified from the program of this conference. The ability to grow high quality micro- and nano- structures usng MBE and other techniques has given a tremendous boost to experimental as well as theoretical activity in this area. In addition to hot carrier effects in heterostructures and quantum wells, I include in this area the exciting new work on ballistic transport, and tunneling and perpendicular transport in superlattices. The second major area that I recognize is the use of recently developed femtosecond lasers in investigating transient hot carrier effects on femtosecond timescales. The experimental activities in this field are being complemented by theoretical studies and calculations. The third major area is a natural consequence of the two above quantum transport theory is required to understand many of the phenomena that occur on ultrasmall spatial scales and ultrafast time scales. Other aspects that will discussed at this Conference include far infrared studies, carrier-carrier interactions, hot phonons, novel devices and their simulations, magnetotransport and impact ionization. I believe that is an exciting program fully representative of the many exciting activities in this field. I am looking forward to many stimulating presentations and discussions.
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