Surface Passivation of Gallium Arsenide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH
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The surface passivation of Si doped 100 n-type gallium arsenide GaAs by chemical treatment with phosphoric acid H3P04, phosphorus trichloride PCl3, and sodium sulfide Na2S.9H2O was investigated using room temperature photoluminescence PL and a capacitance-voltage C-V and current-voltage I-V profiler. After passivation, the 300K PL increased for all three treatments. Best results obtained showed improvements of 1.4, 3.5 and 5.3 times greater of PL efficiency for H3PO4, PCl3 and Na2S, respectively, over unpassivated samples that were only cleaned and etched. Samples that were cleaned, etched and washed with de-ionized 18 Mohm, 5 ppm O2 content water showed about the same PL increase as the H3PO4 passivation. Capacitance-voltage and I-V profile curves showed the removal of the surface oxide hysteresis with the PCl3 passivated samples however, re-oxidation seems to take longer than normal and to be confined to the passivation layer. Theses. mjm
- Inorganic Chemistry