Accession Number:

ADA196403

Title:

Determination of the Unstable States of the Solid State Plasma in Semiconductor Devices

Descriptive Note:

Doctoral thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1988-05-01

Pagination or Media Count:

216.0

Abstract:

When a semiconductor device fails, a complicated set of actions takes place to move the device from a high voltage, low current state to a low voltage, high current state. Accompanying these changes are the collapse of isotropic current flow to a small column or filament of current which rapidly grows and heats the device to the melting point. These actions are collectively called second breakdown. This work reviews past results to show that second breakdown is the formation of a current controlled negative resistance CCNR regime which necessarily forces current flow to form a current filament. The current filament is modeled as a solid state plasma column undergoing a self- induced magnetic pinch as a result of the CNNR. The dispersion relation is derived to first order to show that the pinching leads to an unstable equilibrium that could lead to material failure. The minimum set of parameters necessary to the formation of second breakdown are determined to be satisfied by the Bennett pinch criterion. Further application is then made to a bipolar power transistor that has been driven into second breakdown to see how the derived criteria applies to a semiconductor device. T

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE