Accession Number:

ADA196018

Title:

Mode Locking of Semiconductor Laser with External Cavity

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Report Date:

1988-05-10

Pagination or Media Count:

13.0

Abstract:

Mode locking of semiconductor laser with external cavity has been observed by optoelectronic feedback. The noticeable narrowing of the microwave spectrum explains the mode locking phenomenon which occurs when the optoelectronic feedback is sufficiently strong. A second order harmonic relating method or a strip camera can be used to measure the pulse width in order to positively identify the locking condition. After testing several semiconductor lasers, the results show that most of these possess a relatively string induced self-pulsing at 1 GHz. A better result can be achieved if a 1 GHz amplifier is used and its magnifying power is increased. The experiment shows that an induced self-pulsing can be obtained from the LD, which originally has no self-pulsing, after an external cavity reaches the passive locking mode, an active-passive self-adjusting locking mode, which occurs owing to the automatic matching between the adjusting frequency and cavity length, can be achieved after the optoelectronic feedback. Chinese translations.

Subject Categories:

  • Lasers and Masers
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE